| PART |
Description |
Maker |
| FESD05LCDS |
Extremely Low Capacitance TVS Diode
|
FutureWafer Tech Co.,Lt...
|
| STB28N60DM2 |
Extremely low gate charge and input capacitance
|
STMicroelectronics
|
| GI811 GI812 GI816 GI818 GI810 GI814 GI817 |
Aluminum Electrolytic Radial Lead Extremely Low Impedance Capacitor; Capacitance: 560uF; Voltage: 63V; Case Size: 12.5x40 mm; Packaging: Bulk
Glass Passivated Junction Fast Switching Rectifier(钝化玻璃结型快速转换整流器)
|
GE Security, Inc.
GE[General Semiconductor]
|
| GI1004 GI1001 GI1002 GI1003 |
GLASS PASSIVATED FAST EFFICIENT RECTIFIER
Aluminum Electrolytic Radial Lead Extremely Low Impedance Capacitor; Capacitance: 470uF; Voltage: 50V; Case Size: 12.5x25 mm; Packaging: Bulk
|
GE[General Semiconductor]
GE Security, Inc.
|
| PMG370XN |
N-channel uTrenchmos (tm) extremely low level FET
N-channel mTrenchMOS extremely low level FET
From old datasheet system
|
NXP Semiconductors
Philips Semiconductors
|
| PMF290XN |
N-channel uTrenchmos (tm) extremely low level FET
N-channel mTrenchMOS extremely low level FET
N-channel mTrenchMOS extremely low level FET
|
http://
PHILIPS[Philips Semiconductors]
|
| STF5N60M2 |
Extremely low gate charge
|
STMicroelectronics
|
| HCU60R350T |
Extremely low switching loss
|
SemiHow Co.,Ltd.
|
| STP40N65M2 |
Extremely low gate charge
|
STMicroelectronics
|
| STD15N60M2-EP |
Extremely low gate charge
|
STMicroelectronics
|
| MBD110DWT1 |
Extremely Low Minority Carrier Lifetime
|
TY Semiconductor Co., Ltd
|
| HSMBJSAC8.0 HSMBJSAC10 HSMBJSAC12 HSMBJSAC15 HSMBJ |
Low Capacitance TVS
500 WATT LOW CAPACITANCE TRANSIENT VOLTAGE SUPPRESSOR 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
|
MICROSEMI[Microsemi Corporation]
Microsemi, Corp.
MICROSEMI CORP-SCOTTSDALE
|
